Photonic Wire Bonds
Photonic Wire Bonds – the benefits
No need for active alignment
Adaptable for any design due to software defined additive fabrication.
Compensates vertical and lateral alignment offsets by up to ± 20 µm.
Flexibility to support standard and non-standard waveguide pitch
Dense pitch down to 10 µm for high chip edge shoreline integration
Scaling from low-volume prototyping up to high-volume mass production
Photonic Wire Bonds – the process
Step 1: Assembly build up with passive component alignment and relaxed tolerances ± 20µm
Step 2: Drop dispense photoresist and passive detection of waveguide interfaces
Step 3: Automatic nanofabrication of Photonic Wire Bonds
Step 4: Post development steps and cleaning of the assembly
Step 5: Encapsulation of the Photonic Wire Bonds
Wavelength compatibility O- to L- band (other wavelengths on request).
Mode field matching from 2µm up to 10+ µm, with elliptical mode field compensation.
Compatible with SM/PM fibers with 8, 12, 24, 32+ channels
Compatible with a wide range of material platforms: silicon on insulator, silicon nitride, thin film lithium niobate (TFLN), indium phosphide, and more.
Refractive Index PWB @ 1550 nm: 1.53
Refractive Index Cladding @ 1550 nm: 1.39
Typical insertion loss down to 0.7 dB
High power operation > 20 dBm
Material absorption negligible
Testing following Telcordia GR-468
Environmental Stress Tests
Damp heat: 1000 hours at 85 °C/85 % RH
Thermal Cycling: 500 cycles -40 °C to 85 °C
Mechanical integrity Tests
Vibration: 20 g, 20 to 2000 Hz 4 min/cycle, 4 cycle/axis
Additional Tests
Operation at 4K. Cryogenic cooling cycles
Fiber to fiber connectivity average insertion loss 1.1 dB, 95% yield with insertion loss below 1.5 dB
Fiber to chip connectivity average insertion loss 1.5 dB, 100% yield with insertion loss below 2.0 dB